Journal of the Microelectronics and Packaging Society

Recently, the transition to hybrid bonding has been an issue in the industry. This is because when the die to die gap is reduced to 10 µm, it is difficult to apply due to the technical limitations of conventional underfill, and it is essential to switch to hybrid bonding after HBM4 due to problems such as heat dissipation in logic die. In this review, we focus on the current status of hybrid bonders rather than the overall content of hybrid bonding as an industrial equipment. Unlike conventional BEOL systems, hybrid bonders are state-of-the-art systems that require extreme precision and require the development of core technologies that have been applied only to semiconductor majors, such as bondheads with 10^-4 rotation precision and precise load control, nano-scale positioning accuracy stages and error correction algorithms, real-time bidirectional optics, and ISO-3 cleanliness environmental control (foreign matter/temperature). In addition, in order to understand the performance of the bonder, the alignment method of HBM, bonding quality test method by C-SAM, and bonding quality test method by bonding quality test by C-SAM, and the overall production of bonding equipment.

Keywords Chiplet, Heterogeneous integration, Hybrid bonding, High bandwidth memory (HBM)