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KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
Journal of the Microelectronics and Packaging Society 2020;27(1):1-7. Published online: May, 26, 2020
DOI : 10.6117/kmeps.2020.27.1.001
The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).
Keywords backside metallization, die attach, Ag/Sn/Ag sandwich structure, high-temperature semiconductor, soldering