2024

Vol.31 No.1

Editorial Office

Review

  • Journal of the Microelectronics and Packaging Society
  • Volume 27(1); 2020
  • Article

Review

Journal of the Microelectronics and Packaging Society 2020;27(1):31-35. Published online: May, 26, 2020

Resistive Switching Characteristic of ZnO Memtransistor Device by a Proton Doping Effect

  • Ki-Hoon Son1, Kyung-Mun Kang2, Hyung-Ho Park2,†, and Hong-Sub Lee1,‡
    1Department of Materials Science & Engineering, Kangwon National University, 2Department of Materials Science and Engineering, Yonsei University
Corresponding author E-mail: hhpark@yonsei.ac.kr, hong-sub.lee@kangwon.ac.kr
Abstract

원자층 증착법(ALD: atomic layer deposition)으로 성장된 ZnO n-type 산화물 반도체를 이용하여 three terminal memristor (memtransistor) 소자를 제작하여 습도에 따른 그 특성을 관찰하였다. 40 nm 두께의 ZnO 박막을 이용하여 channel width 70 μm, length 5 μm, back gate 구조의 memtransistor 소자를 제작하여 습도에 (40%, 50%, 60%, 70%) 따 른 gate tunable memristive 특성변화를 관찰하였다. 습도가 높아질수록 electron mobility와 gate controllability가 감소하 여 수소도핑효과에 의한 carrier 농도가 증가하는 거동의 output curve가 관찰되었다. 60%, 70%의 습도에서 memristive 거동이 관찰되었으며 습도가 높아질수록 on/off ratio는 증가하는 반면 gate controllability가 감소하였다. 60% 습도에서 가장 우수한 특성의 gate tunable memristive 특성을 얻을 수 있었다.
This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 μm, channel length 5 μm, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

Keywords Memtransistor, Resistive switching, Gate tunability, Hydrogen, Humidity