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  • Journal of the Microelectronics and Packaging Society
  • Volume 27(3); 2020
  • Article

Review

Journal of the Microelectronics and Packaging Society 2020;27(3):69-72. Published online: Nov, 30, 2020

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DOI : 10.6117/kmeps.2020.27.3.069

A Comparison Study on Quantum Dots Light Emitting Diodes Using SnO2 and TiO2 Nanoparticles as Solution Processed Double Electron Transport Layers

  • Seungchul Shin, Suhyeon Kim, Seunghun Jang, Jiwan Kim†
    Department of Advanced Materials Engineering, Kyonggi University
Corresponding author E-mail: jiwank@kyonggi.ac.kr
Abstract

본 연구에서는 SnO2 nanoparticles (NPs) 위에 TiO2 NPs를 코팅하여 Quantum Dots Light Emitting Diodes (QLEDs)를 제작하였다. TiO2 NPs는 SnO2 NPs보다 conduction band minimum (CBM) 준위가 낮다. 따라서 SnO2 층과 발광층의 CBM 준위 사이에 위치해 에너지 장벽을 감소시키고, 전자의 이동을 원활하게 할 것으로 예상하였다. QLEDs 는 inverted 구조로 제작되었으며, SnO2 단일층을 사용한 경우보다 발광 특성이 향상된 것을 확인하였다. 이중 전자수송 층을 적용한 이번 연구를 통해 SnO2를 QLEDs에 전자수송층으로 적용할 수 있을 것으로 기대한다.
In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO2 NPs is lower than SnO2 NPs. Therefore, it is expected that inserting TiO2 NPs between the SnO2 layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO2 layer. Keywords: SnO2 NPs, TiO2 NPs, Quantum dots, Electron transport layer.

Keywords SnO2 NPs, TiO2 NPs, Quantum dots, Electron transport layer