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KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
Journal of the Microelectronics and Packaging Society 2020;27(4):39-45. Published online: Feb, 17, 2021
DOI : 10.6117/kmeps.2020.27.4.039
The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 oC oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/cm2 at -0.13 V vs. RHE.
Keywords Cu, Cu2O, CuO, Oxidation, Photoelectrode, Water splitting