2024

Vol.31 No.1

Editorial Office

Review

  • Journal of the Microelectronics and Packaging Society
  • Volume 29(2); 2022
  • Article

Review

Journal of the Microelectronics and Packaging Society 2022;29(2):81-89. Published online: Aug, 11, 2022

Non-conductive Film Effect on Ni-Sn Intermetallic Compounds Growth Kinetics of Cu/Ni/Sn-2.5Ag Microbump during Annealing and Current Stressing

  • Gahui Kim1, Hyodong Ryu2, Woobin Kwon1, Kirak Son3, and Young-Bae Park1,†
    1School of Materials Science and Engineering, Andong National University, 1375 Gyeongdong-ro, Andong-si, Gyeongsangbuk-do, 36729, Korea, 2JCET STATS ChipPAC Korea LTD., 299, Jayumuyeok-ro, Jung-gu, Incheon, 22379, Korea, 3DMC Convergence Research Department, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Korea
Corresponding author E-mail: ybpark@anu.ac.kr
Abstract

비전도성 필름(non-conductive film, NCF)의 적용이 Cu/Ni/Sn-2.5Ag 미세범프의 금속간화합물(intermetallic compound, IMC) 성장 거동에 미치는 영향을 분석하기 위해 110, 130, 150oC의 온도 조건과 1.3105 A/cm2의 전류밀도 조건에서 실시간 열처리 및 electromigration(EM) 실험을 진행하였다. 그 결과, NCF 적용 유무와 열처리 및 EM 실험과 관계없이 Ni3Sn4 IMC 성장에 필요한 활성화에너지는 약 0.52 eV로 큰 차이는 보이지 않았다. 이는 Ni-Sn IMC의 성장 속도가 Cu-Sn IMC 성장 속도보다 매우 느리며, 또한 Ni-Sn IMC의 성장 거동은 시간의 제곱근에 선형적으로 증가하므 로 확산이 지배하는 동일한 반응기구를 가지며 NCF 적용에 따른 역응력(back stress)의 EM 억제 효과가 크지 않기 때문 에 Ni3Sn4 IMC 성장에 필요한 활성화에너지는 차이가 나지 않는 것으로 판단된다.
The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150oC with a current density of 1.3105 A/cm2 conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni3Sn4 IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni3Sn4 IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

Keywords Non-conductive film, Electromigration, Intermetallic Compound, Activation energy, Microbump