2024

Vol.31 No.2

Editorial Office

Review

  • Journal of the Microelectronics and Packaging Society
  • Volume 29(4); 2022
  • Article

Review

Journal of the Microelectronics and Packaging Society 2022;29(4):1-8. Published online: Feb, 9, 2023

Scallop-free TSV, Copper Pillar and Hybrid Bonding for 3D Packaging

  • Ye Jin Jang, Jae Pil Jung
    Dept. of Materials Science and Engineering, University of Seoul
Corresponding author E-mail: jpjung@uos.ac.kr
Abstract

TSV 기술을 포함한 고밀도, 고집적 패키징 기술은 IoT, 6G/5G 통신, HPC (high-performance computing) 등 여러 분야에서 중요한 기술로 여겨지고 있다. 2차원에서 고집적화를 달성하는 것은 물리적 한계에 도달하게 되었으며, 따라서 3D 패키징 기술을 위하여 다양한 연구들이 진행되고 있다. 본 고에서 scallop의 형성 원인과 영향, 매끈한 측벽을 만들기 위한 scallop-free 에칭 기술, TSV 표면의 Cu bonding에 대해서 자세히 조사하였다. 이러한 기술들은 고품질 TSV 형성 및 3D 패키징 기술에 영향을 줄 것으로 예상한다.
High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO2 hybrid bonding in TSV. These technologies are expected to have effects on the formation of highquality TSVs and the development of 3D packaging technologies.

Keywords Three dimensional packaging, Through-Si-Via (TSV), Scallop-free, Cu bonding