Journal of the Microelectronics and Packaging Society

두께 2.5~10 μm인 n형 Bi2Te3와 p형 Sb2Te3 레그 8쌍으로 구성되어 있는 in-plane형 열전박막소자를 전기도금법으로 Si submounts에 형성하고, LED 칩의 구동에 의해 발생하는 겉보기 온도차 ΔT와 레그 두께에 따른 발전특성을 분석하였다. LED 방출열에 의해 인가된 ΔT가 7.4K일 때 각기 두께 2.5 μm, 5 μm 및 10 μm의 p-n 레그들로 구성된 열전박막소자는 6.1 mV, 7.4 mV 및 11.8 mV의 open circuit 전압을 나타내었으며, 6.6 nW, 12.8 nW 및 41.9 nW의 최대 출력전력을 나타내었다.
Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type Bi2Te3 and p-type Sb2Te3 legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ΔT caused by LED lighting as well as the change of the leg thickness. When ΔT was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were 2.5 μm, 5 μm, and 10 μm, respectively.

Keywords thermoelectrics, energy harvesting, LED, thin films, electrodeposition.