![](/html/templates/default/images/main/pic/journal01.png)
Search
- Past Issues
- e-Submission
-
KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
Editorial Office
- +82-2-538-0962
- +82-2-538-0963
- kmeps@kmeps.or.kr
- http://kmeps.or.kr/
KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
Journal of the Microelectronics and Packaging Society 2023;30(1):63-70. Published online: May, 11, 2023
DOI : dx.doi.org/10.6117/kmeps.2023.30.1.063
Today, the importance of power semiconductors continues to increase due to serious environmental pollution and the importance of energy. Particularly, SiC-MOSFET, which is one of the wide bandgap (WBG) devices, has excellent high voltage characteristics and is very important. However, since the electrical properties of SiC-MOSFET are heat-sensitive, thermal management through a package is necessary. In this paper, we propose an insulated metal substrate (IMS) method rather than a direct bonded copper (DBC) substrate method used in conventional power semiconductors. IMS is easier to process than DBC and has a high coefficient of thermal expansion (CTE), which is excellent in terms of cost and reliability. Although the thermal conductivity of the dielectric film, which is an insulating layer of IMS, is low, the low thermal conductivity can be sufficiently overcome by allowing a process to be very thin. Electric-thermal co-simulation was carried out in this study to confirm this, and DBC substrate and IMS were manufactured and experimented for verification.
Keywords Power semiconductor, Finite element method, Electric-thermal analysis, Direct bonded copper, Insulated metal substrate