2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 30(2); 2023
  • Article

Review

Journal of the Microelectronics and Packaging Society 2023;30(2):43-51. Published online: Aug, 18, 2023

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DOI : doi.org/10.6117/kmeps.2023.30.2.043

Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN

  • Dongjin Kim† , Junghwan Bang, and Min-Su Kim†
    Advanced Joining & Additive Manufacturing R&D Department / Micro-Joining Center, Korea Institute of Industrial Technology (KITECH), 156, Gaetbeol-ro, Yeonsu-gu, Incheon 21999, Republic of Korea
Corresponding author E-mail: dongjinkim@kitech.re.kr, mskim927@kitech.re.kr
Abstract

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

Keywords silicon carbide (SiC), gallium nitride (GaN), power device, field-effect transistor, avalanche breakdown, channel mobility

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