2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 30(2); 2023
  • Article

Review

Journal of the Microelectronics and Packaging Society 2023;30(2):52-59. Published online: Aug, 18, 2023

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DOI : doi.org/10.6117/kmeps.2023.30.2.0052

Effects of Dielectric Curing Temperature and T/H Treatment on the Interfacial Adhesion Energies of Ti/PBO for Cu RDL Applications of FOWLP

  • Kirak Son1 , Gahui Kim2 , and Young-Bae Park2,†
    1 STATS ChipPAC Korea Ltd, 191, Jayumuyeok-ro, Jung-gu, Incheon, 22379, Korea, 2 School of Materials Science and Engineering, Andong National University, 1375, Gyeongdong-ro, Andong-si, Gyeongsangbuk-do, 36729, Korea
Corresponding author E-mail: ybpark@anu.ac.kr
Abstract

The effects of dielectric curing temperature and temperature/humidity treatment conditions on the interfacial adhesion energies between Ti diffusion barrier/polybenzoxazole (PBO) dielectric layers were systematically investigated for Cu redistribution layer applications of fan-out wafer level package. The initial interfacial adhesion energies were 16.63, 25.95, 16.58 J/m2 for PBO curing temperatures at 175, 200, and 225 ℃, respectively. X-ray photoelectron spectroscopy analysis showed that there exists a good correlation between the interfacial adhesion energy and the C-O peak area fractions at PBO delaminated surfaces. And the interfacial adhesion energies of samples cured at 200 ℃ decreased to 3.99 J/m2 after 500 h at 85 ℃/85 % relative humidity, possibly due to the weak boundary layer formation inside PBO near Ti/PBO interface.

Keywords fan-out package, interfacial adhesion energy, 4-point bending test, polybenzoxazole, Cu redistribution layer

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