2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 30(2); 2023
  • Article

Review

Journal of the Microelectronics and Packaging Society 2023;30(2):60-64. Published online: Aug, 18, 2023

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DOI : doi.org/10.6117/kmeps.2023.30.2.060

A Study on Contact Resistance Properties of Metal/CVD Graphene

  • Dong Yeong Kim, Haneul Jeong, and Sang Hyun Lee†
    School of Chemical Engineering, Chonnam National University, 77 Yong-bong-ro, Buk-gu, Gwangju 61186, Korea
Corresponding author E-mail: leeshyun@chonnam.ac.kr
Abstract

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO2/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of highperformance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

Keywords Graphene, Metal, Contact resistance, Chemical vapor deposition, Field effect transistor

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