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  • Journal of the Microelectronics and Packaging Society
  • Volume 25(4); 2018
  • Article

Review

Journal of the Microelectronics and Packaging Society 2018;25(4):1-7. Published online: Feb, 1, 2019

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DOI : 10.6117/kmeps.2018.25.4.001

Organic-inorganic Hybrid Dielectric with UV Patterning and UV Curing for Global Interconnect Applications

  • Changmin Song1, Haesung Park2, Hankyeol Seo3, Sarah Eunkyung Kim1, †
    1Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology 2Department of Mechanical Engineering, Seoul National University of Science and Technology 3Media IT Engineering Program, Seoul National University of Science and Technology
Corresponding author E-mail: eunkyung@seoultech.ac.kr
Abstract

As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.

Keywords Dielectric, PSSQ, Global Interconnect, UV Curing, Metallization.