2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 30(3); 2023
  • Article

Review

Journal of the Microelectronics and Packaging Society 2023;30(3):56-63. Published online: Nov, 9, 2023

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DOI : doi.org/10.6117/kmeps.2023.30.3.056

Enhancing Electrical Properties of Sol-Gel Processed IGZO Thin-Film Transistors through Nitrogen Atmosphere Electron Beam Irradiation

  • Jeeho Park1 , Young-Seok Song1 , Sukang Bae2,3†, and Tae-Wook Kim1,2†
    1 Department of Flexible and Printable Electronics, LANL‐JBNU Engineering Institute‐Korea, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea, 2 Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea, 3 Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeollabuk-do 55324, Republic of Korea
Corresponding author E-mail: sbae@kist.re.kr, twk@jbnu.ac.kr
Abstract

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N2) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

Keywords Indium-Gallium-Zinc Oxide (IGZO), Thin-film transistors (TFTs), electron beam irradiation (EBI), Sol-gel, Electrical characteristics

REFERENCES
  • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature, 432(7016), 488-492 (2004).
  • T. Kamiya and H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors", NPG Asia Materials, 2(1), 15-22 (2010).
  • E. Fortunato, P. Barquinha, and R. Martins, "Oxide semiconductor thin-film transistors: a review of recent advances", Adv. Mater., 24(22), 2945-2986 (2012).
  • P. Heremans, A. K. Tripathi, A. de Jamblinne de Meux, E. C. Smits, B. Hou, G. Pourtois, and G. H. Gelinck, "Mechanical and electronic properties of thin-film transistors on plastic, and their integration in flexible electronic applications", Adv. Mater., 28(22), 4266-4282 (2016).
  • A. Liu, H. Zhu, H. Sun, Y. Xu, and Y. Y. Noh, "Solution processed metal oxide high-κ dielectrics for emerging transistors and circuits", Adv. Mater., 30(33), 1706364 (2018).
  • E. A. Cochran, K. N. Woods, D. W. Johnson, C. J. Page, and S. W. Boettcher,"Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications", Journal of Materials Chemistry A, 7(42), 24124-24149 (2019).
  • J. W. Jo, S. H. Kang, J. S. Heo, Y. H. Kim, and S. K. Park, "Flexible metal oxide semiconductor devices made by solution methods", Chemistry-A European Journal, 26(42), 9126-9156 (2020).
  • D. J. Kim, D. L. Kim, Y. S. Rim, C. H. Kim, W. H. Jeong, H. S. Lim, and H. J. Kim, "Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process", ACS Applied Materials & Interfaces, 4(8), 4001-4005 (2012).
  • Y. H. Kim, J. S. Heo, T. H. Kim, S. Park, M. H. Yoon, J. Kim, M. S. Oh, G.-R. Yi, Y.-Y. Noh, and S. K. Park, "Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films", Nature, 489(7414), 128-132 (2012).
  • Y. S. Rim, W. H. Jeong, D. L. Kim, H. S. Lim, K. M. Kim, and H. J. Kim, "Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors", Journal of Materials Chemistry, 22(25), 12491-12497 (2012).
  • H. J. Kim, Y. J. Tak, S. P. Park, J. W. Na, Y. Kim, S. Hong, P. H. Kim, G. T. Kim, B. K. Kim, and H. J. Kim, "The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films", Scientific Reports, 7(1), 1-9 (2017).
  • M. Benwadih, R. Coppard, K. Bonrad, A. Klyszcz, and D. Vuillaume, "High mobility flexible amorphous IGZO thin-film transistors with a low thermal budget ultra-violet pulsed light process", ACS Applied Materials & Interfaces, 8(50), 34513-34519 (2016).
  • S. Park, K.-H. Kim, J.-W. Jo, S. Sung, K.-T. Kim, W.-J. Lee, J. Kim, H. J. Kim, G.-R. Yi, Y.-H. Kim, M.-H. Yoon, and S. K. Park, "In-depth studies on rapid photochemical activation of various sol-gel metal oxide films for flexible transparent electronics", Adv. Funct. Mater., 25(19), 2807-2815 (2015).
  • Y. Nam, H.-O. Kim, S. H. Cho, C.-S. Hwang, T. Kim, S. Jeon, and S.-H. K. Park, "Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor", Journal of Information Display, 17(2), 65-71 (2016).
  • D. G. Kim, J. U. Kim, J. S. Lee, K. S. Park, Y. G. Chang, M. H. Kim, and D. K. Choi, "Negative threshold voltage shift in an a-IGZO thin film transistor under X-ray irradiation", RSC Advances, 9(36), 20865-20870 (2019).
  • Y. Nam, H. O. Kim, S. H. Cho, and S. -H. K. Park, "Effect of hydrogen diffusion in an In-Ga-Zn-O thin film transistor with an aluminum oxide gate insulator on its electrical properties", RSC Advances, 8(10), 5622-5628 (2018).
  • K. Nomura, T. Kamiya, and H. Hosono, "Effects of diffusion of hydrogen and oxygen on electrical properties of amorphous oxide semiconductor, In-Ga-Zn-O", ECS Journal of Solid State Science and Technology, 2(1), P5 (2012).
  • A. Janotti and C. G. Van de Walle, "Hydrogen multicentre bonds", Nature materials, 6(1), 44-47 (2007).
  • S. I. Oh, J. M. Woo, and J. H. Jang, "Comparative studies of long-term ambiance and electrical stress stability of IGZO thin-film transistors annealed under hydrogen and nitrogen ambiance", IEEE Transactions on Electron Devices, 63(5), 1910-1915 (2016).