Vol.30 No.4

Editorial Office


  • Journal of the Microelectronics and Packaging Society
  • Volume 30(3); 2023
  • Article


Journal of the Microelectronics and Packaging Society 2023;30(3):88-93. Published online: Nov, 9, 2023

Design for Enhanced Precision in 300 mm Wafer Full-Field TTV Measurement

  • An-Mok Jeong and Hak-Jun Lee
    Department of Smart Manufacturing R&D System, Korea Institute of industrial Technology, 89, Yangdaegiro-gil, Ipjang-myeon, Seobuk-gu, Cheonan-si, Chungcheongnam-do, Korea
Corresponding author E-mail: hak1414@kitech.re.kr

As the demand for High Bandwidth Memory (HBM) increases and the handling capability of larger wafers expands, ensuring reliable Total Thickness Variation (TTV) measurement for stacked wafers becomes essential. This study presents the design of a measurement module capable of measuring TTV across the entire area of a 300mm wafer, along with estimating potential mechanical measurement errors. The module enables full-area measurement by utilizing a center chuck and lift pin for wafer support. Modal analysis verifies the structural stability of the module, confirming that both the driving and measuring parts were designed with stiffness exceeding 100 Hz. The mechanical measurement error of the designed module was estimated, resulting in a predicted measurement error of 1.34 nm when measuring the thickness of a bonding wafer with a thickness of 1,500 μm.

Keywords Total thickness variation(TTV), High bandwidth memory(HBM), Cattier wafer, Device wafer, Temporary bonding & debonding(TBDB)

  • Y. Liu, H. Tao, D. Zhao, X. Lu, "An Investigation on the Total Thickness Variation Control and Optimization in the Wafer Backside Grinding Process", Materials,15(12) (2022)
  • W. Sun, Z. J. Pei, G. R. Fisher, "Fine grinding of silicon wafers: effects of chuck shape on grinding marks", International Journal of Machine Tools and Manufacture, 45(6), 673-686 (2005)
  • X. Guo, W. Yao, X. Zhu, Y. Li, R. Kang, "Research on the shape of ground wafer in Back Grinding of Wafer with Outer Rim", Materials Science in Semiconductor Processing, 139 (2022)
  • Z. Xianglong, W. Yao, X. Guo, R. Kang, M. J. Ahmad, "The effect of the chuck shape on the wafer topography in back grinding of wafer with outer rim", Advances in Mechanical Engineering, 13(10), (2021)
  • K. Tang, R. Kang, D. Guo, L. Song, "Modeling and investigation on wafer shape in wafer rotational grinding method", The International Journal of Advanced Manufacturing Technology, 64, 707-714 (2013)
  • Y. S. Kim, N. Maeda, H. Kitada, K. Fujimoto, S. Kodama, A. Kawai, K. Arai, K. Suzuki, T. Nakamura, T. Ohba, "Advanced wafer thinning technology and feasibility test for 3D integration", Microelectronic Engineering, 107, 65-71 (2013)
  • J. Bae, J. Park, H. Ahn, J. Jin, "Total physical thickness measurement of a multi-layered wafer using a spectral-domain interferometer with an optical comb", Optics Express, 25(11), 12689-12697 (2017)
  • S. Maeng, J. Park, B. O, J. Jin, "Uncertainty improvement of geometrical thickness and refractive index measurement of a silicon wafer using a femtosecond pulse laser", Optics Express, 20(11), 12184-12190 (2012)
  • S. D. Kim, J. W. Jung, "Novel Wafer Warpage Measurement Method for 3D Stacked IC", Journal of the Semiconductor & Display Technology, 17(1), 86-90 (2018)
  • E.-K. Kim, "Assessment of ultra-thin Si wafer thickness in 3D wafer stacking", Microelectronics Reliability, 50(2), 195-198 (2010)
  • Y. Kim, S.-K. Kang, S. E. Kim, "Study of thinned Si wafer warpage in 3D stacked wafers", Microelectronics Reliability, 50(12), 1988-1993 (2010)