Vol.30 No.4

Editorial Office


  • Journal of the Microelectronics and Packaging Society
  • Volume 30(4); 2023
  • Article


Journal of the Microelectronics and Packaging Society 2023;30(4):8-16. Published online: Feb, 20, 2024

A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding

  • Yeonju Kim, Sang Woo Park, Min Seong Jung, Ji Hun Kim, and Jong Kyung Park
    Department of Semiconductor Engineering, Seoul National University of Science and Technology, 232, Gongneung-ro, Nowon-gu, Seoul, 01811, Korea
Corresponding author E-mail: jkpark1@seoultech.ac.kr

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/ SiO2 structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO2 structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO2. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

Keywords 3D IC Package, Hybrid bonding, SiCN Dielectric, Cu/SiCN

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