2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 30(4); 2023
  • Article

Review

Journal of the Microelectronics and Packaging Society 2023;30(4):32-43. Published online: Feb, 20, 2024

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DOI : doi.org/10.6117/kmeps.2023.30.4.032

Research Trends on Interface-type Resistive Switching Characteristics in Transition Metal Oxide

  • Dong-eun Kim, Geonwoo Kim, Hyung Nam Kim, and Hyung-Ho Park†
    Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, South Korea
Corresponding author E-mail: hhpark@yonsei.ac.kr
Abstract

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

Keywords Interface-type, RRAM, Resistive switching, Transition metal oxide

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