2024

Vol.31 No.3

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  • Journal of the Microelectronics and Packaging Society
  • Volume 31(2); 2024
  • Article

Review

Journal of the Microelectronics and Packaging Society 2024;31(2):85-91. Published online: Jul, 25, 2024

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DOI : doi.org/10.6117/kmeps.2024.31.2.085

MOCVD Growth and Characterization of Heteroepitaxial Beta-Ga2O3

  • Jeong Soo Chung1 , An-Na Cha3 , Gieop Lee1 , Sea Cho1 , Young-Boo Moon4 , Myungshik Gim4 , Moo Sung Lee1,†, and Jun-Seok Ha1,2,†
    1 Department of Chemical Engineering, Chonnam National University, 77 Yong-bong-ro, Buk-gu, Gwangju 61186, Korea, 2 Optoelectronics Convergence Research Center, Chonnam National University, 77 Yong-bong-ro, Buk-gu, Gwangju 61186, Korea, 3 Energy Convergence Core-Facility, Chonnam National University, 77 Yong-bong-ro, Buk-gu, Gwangju 61186, Korea, 4 UJL Inc. Advanced Institutes of Convergence Technology A1513, Kwangkyo-ro 145, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea
Corresponding author E-mail: moosung@chonnam.ac.kr, jsha@jnu.ac.kr
Abstract

In this study, we investigated a method of growing single crystal β-Ga2O3 thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the β-Ga2O3 thin film and confirmed the effect of the ratio between O2 and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O2/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100°C. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the (201) and (402) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.

Keywords β-Ga2O3, MOCVD, Heteroepitaxy, Temperature, Single crystal

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