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KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
Journal of the Microelectronics and Packaging Society 2024;31(2):85-91. Published online: Jul, 25, 2024
DOI : doi.org/10.6117/kmeps.2024.31.2.085
In this study, we investigated a method of growing single crystal β-Ga2O3 thin films on a c-plane sapphire substrate using MOCVD. We confirmed the optimal growth conditions to increase the crystallinity of the β-Ga2O3 thin film and confirmed the effect of the ratio between O2 and Ga precursors on crystal growth on the crystallinity of the thin film. The growth temperature range was 600~1100℃, and crystallinity was analyzed when the O2/TMGa ratio was 800~6000. As a result, the highest crystallinity thin film was obtained when the molar ratio between precursors was 2400 at 1100°C. The surface of the thin film was observed with a FE-SEM and XRD ω-scan of the thin film, the FWHM was found to be 1.17° and 1.43° at the (201) and (402) diffraction peaks. The optical band gap energy obtained was 4.78 ~ 4.88 eV, and the films showed a transmittance of over 80% in the near-ultraviolet and visible light regions.
Keywords β-Ga2O3, MOCVD, Heteroepitaxy, Temperature, Single crystal