2024

Vol.31 No.3

Current Issue Archives
Search
Advanced Search
Editorial Office

Review

  • Journal of the Microelectronics and Packaging Society
  • Volume 31(3); 2024
  • Article

Review

Journal of the Microelectronics and Packaging Society 2024;31(3):99-104. Published online: Oct, 30, 2024

PDF Full Text XML

DOI : doi.org/10.6117/kmeps.2024.31.3.099

Analysis of Parasitic Inductance and Switching Losses through Lead Frame Modification and Snubber for Automotive SiC Power Modules

  • Jaejin Jeon1 , Seokjin Shin2 , Kyung Tae Min2 , and Sang Won Yoon1,†
    1 Department of Electrical and Computer Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea, 2 Department of Automotive Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea
Corresponding author E-mail: swyoon@snu.ac.kr
Abstract

With the advancement of power electronics technology and the increasing demand for high-efficiency power semiconductors, silicon carbide (SiC) devices have gained attention as an alternative to overcome the limitations of traditional silicon (Si) semiconductors. SiC devices enable excellent switching efficiency due to their high switching speed. However, parasitic inductance within the power module can cause voltage oscillations and overshoot phenomena, potentially leading to issues with electrical reliability and efficiency. To address these challenges, two approaches were proposed and validated. The first approach involved applying an RC snubber circuit to mitigate the effects of parasitic inductance, thereby improving electrical stability. The second approach focused on optimizing the lead-frame design to reduce parasitic inductance. Both methods were verified through simulations and experiments, demonstrating that the electrical reliability and efficiency of SiC power modules can be simultaneously improved.

Keywords Parasitic inductance, RC snubber, Double pulse test (DPT), Voltage overshoot, Switch loss, Silicon carbide (SiC)

REFERENCES
  • M. F. Yaakub, M. A. M. Radzi, F. H. M. Noh, M. Azri, Silicon carbide power device characteristics, applications andchallenges: an overview, International Journal of PowerElectronics and Drive System, 11 (2020)
  • M. Shur, Wide Band gap semiconductor technology: State-of-the-art, Solid-State Electronics, 155 (2019)
  • Y. Liu, Z. Zhao, W. Wang, J. Lai, Characterization andExtraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module, IEEE Transactions on ElectronDevices, 67 (2020)
  • X. Yuan, , Application of silicon carbide (SiC) power devices:Opportunities, challenges and potential solutions, (2017)
  • J. Lim, J. Seong, J. Jeon, Y. S. Kim, H. C. Im, W. S. Hong, S. W. Yoon, Design and Experimental Evaluation of Transfer-Molded 650 V Super-Junction MOSFET Power Modulefor Industrial Applications, IEEE Transactions on IndustryApplications, 57 (2021)
  • K. Yatsugi, K. Nomura, Y. Hattori, Analytical Technique forDesigning an RC Snubber Circuit for Ringing Suppression ina Phase-Leg Configuration, IEEE Transactions on PowerElectronics, 33 (2017)
  • D. Levett, Z. Zheng, T. Frank, , Double Pulse Testing: TheHow, What and Why, (2020)
  • J. Jeon, J. Seong, J. Lim, M. K. Kim, T. Kim, S. W. Yoon, Finite Element and Experimental Analysis of Spacer Designsfor Reducing the Thermomechanical Stress in Double-SidedCooling Power Modules, IEEE Journal of Emerging andSelected Topics in Power Electronics, 9 (2021)
  • S. Cho, S. Pyun, S. W. Yoon, Analysis and Design Optimization of Tilted Rounded-Rectangular Pin-Fins Heat Sinkfor xEV Double-Sided Cooling Power Module, IEEE Journal of Emerging and Selected Topics in Power Electronics, 12 (2024)