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KCI Accredited Journals KCI 등재지
KCI Impact Factor 0.54
1Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology 2Department of Mechanical Engineering, Seoul National University of Science and Technology 3Media IT Engineering Program, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 1-7.
As the performance and density of IC (integrated circuit) devices increase, power and signal integrities in the global interconnects of advanced packaging technologies are becoming more difficult. Thus, the global interconnect technologies should be designed to accommodate increased input/output (I/O) counts, improved power grid network integrity, reduced RC delay, and improved electrical crosstalk stability. This requirement resulted in the fine-pitch interconnects with a low-k dielectric in 3D packaging or wafer level packaging structure. This paper reviews an organic-inorganic hybrid material as a potential dielectric candidate for the global interconnects. An organic-inorganic hybrid material called polysiloxane can provide spin process without high temperature curing, an excellent dielectric constant, and good mechanical properties.
Dielectric, PSSQ, Global Interconnect, UV Curing, Metallization.
1Department of Materials Science and Engineering, University of Seoul 2Lightweight Materials Technology Center
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 9-15.
This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.
Transient liquid phase bonding, Power module, High temperature, SiC, Solder.
Department of Materials Science and Engineering, University of Seoul 1Lightweight Materials Technology Center 2Duksan Hi-Metal Co. Ltd.
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 17-23.
Recently, electric semiconductors became an issue because of efficient use of energy and compaction of electronics. Silicon electric semiconductors are difficult to put into it because of its physical limitations. Hence, the study of WBG (Wideband Gap) semiconductors like SiC and GaN began. These devices received attention because it can be miniaturized and worked at high temperatures over 300°C. WBG MOSFET electric semiconductors can show performance like silicon IGBT. This can solve the current problem of IGBT tail. The current study shows the technical principles and issues related to SiC and GaN power semiconductors. WBG devices can achieve high performance compared to silicon, but its performance can’t be fully utilized because of lack in bonding technology. Therefore, this review introduces research on WBG devices and their packaging issues.
WBG, SiC, GaN, Power semiconductor, Power module.
1Graduate School of Nano IT Design Fusion, Seoul National University of Science and Technology 2Dept. Of Manufacturing System and Design Engineering, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 25-34.
In this paper, we review the latest technical progress and commercialization of stretchable interconnectors, stretchable strain sensors, and stretchable substrates for stretchable electronics. The development of stretchable electronics can pave a way for new applications such as wearable devices, bio-integrated devices, healthcare and monitoring, and soft robotics. The essential components of stretchable electronic devices are stretchable interconnector and stretchable substrate. Stretchable interconnector should have high stretchability and high electrical conductivity as well as stability under severe mechanical deformation. Therefore several nanocomposite-based materials using CNT, graphene, nanowire, and metal flake have been developed. Geometric engineering such as wavy, serpentine, buckled and mesh structure has been well developed. Stretchable substrate should also pose high stretchability and compatibility with stretchable sensing or interconnecting material. We summarize the recent research results of new materials for stretchable interconnector and substrate as well as strain sensors. The Important challenges in development of the stretchable interconnector and substrate are also briefly discussed.
Stretchable electronics, Interconnector, Strain sensor, Stretchable substrate.
Electronic Convergence Materials Division, Korea Institute of Ceramic Engineering & Technology (KICET)
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 35-40.
다양한 디바이스 응용분야에 블록공중합체가 사용되기 위해, 블록공중합체의 형상을 제어하기 위한 간단하면서도 실용적인 합성방법이 필요하다. 하지만 콜로이드성의 형판을 사용하는 기존의 방식은 공정이 복합하고 비용이 많이 발생하여, 고순도의 코어-쉘 나노입자를 대량생산하기에 적합하지 않다. 본 논문에서 PS-b-PDMS 블록공중합체를 담금 어닐링하여, 20 nm 이하크기를 가지는 PS가 봉입된 코어-쉘 구조의 SiOx나노입자를 합성하였다. 또한, 어닐링 공정에 사용되는 헵테인과 에탄올의 혼합비율이 자기조립된 PS-b-PDMS 블록공중합체 나노입자의 형상에 어떠한 영향을 미치는지 분석하였으며, 최적의 담금어닐링 조건에서 나노입자가 worm-like구조로 변화하는 것을 확인하였다. 이러한 파우더 합성법은 다른 용매기반의 블록공중합체 합성방법에 응용이 가능할 것으로 생각되며, 새로운 가이드라인을 제공할 것으로 예상된다.
Simple and useful synthetic process to control the morphology of block copolymers (BCPs) is required for implementation in various device applications. However, the conventional method to use colloidal templates is not enough to realize the production of pure and massive core-shell nanoparticles due to the cost-intensive complex process. Here, we introduce a novel and facile synthesis method to realize the formation of core-shell SiOx nanoparticle power by employing an immersion annealing of a sphere-forming poly(styrene-b-dimethylsiloxane) (PS-b-PDMS) BCP. We successfully obtained a PS-encapsulated SiOx nanoparticle with a diameter of ~20 nm. In addition, we analyzed how the mixing ratio of heptane/ethanol affects the BCP morphology of self-assembled PS-b-PDMS nanoparticles, showing a worm-like structure under the optimum immersion conditions. This useful approach is expected to be extendable to other solvent-based BCP synthesis, providing a new guideline for unique BCP production.
block copolymer, core-shell, immersion annealing, morphology control.
Department of Mechanical System Design Engineering, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 41-45.
패널 레벨 패키지(Panel Level Package)에서 공정 단계별로 발생하는 휨(warpage)에 대해 유한요소법을 이용하여 전산모사를 진행하였다. 5 × 5 mm2 크기의 실리콘 칩이 총 221개가 포함된 122.4 × 93.6 mm2 크기의 패널에 대해서 ① EMC 몰딩, ② detach core 부착, ③ 가열, ④ 캐리어 분리, ⑤ 냉각의 5 단계에 대해서 해석을 수행하였으며, 캐리어와 detach core 소재로 유리와 FR4의 조합이 휨 현상에 미치는 영향을 조사하였다. 캐리어 및 detach core의 소재에 따라 공정 단계별로 휨의 경향이 다르게 나타나고 있으나, 최종적으로는 유리를 캐리어로 사용하는 경우에 detach core의 소재와 관계없이 FR4 캐리어에 비해 낮은 휨 값을 나타내었으며 유리 캐리어와 유리 detach core의 조합에서 가장 낮은 휨값이 관찰되었다.
We have simulated the process induced warpage for panel level package using finite element method. Silicon chips of 5 × 5 mm2 were redistributed on 122.4 × 93.6 mm2 size panel and the total number of redistributed chips was 221. The warpage at each process step, for example, ① EMC molding, ② attachment of detach core, ③ heating, ④ removal of a carrier, and ⑤ cooling was simulated using ANSYS and the effects of detach core and carrier materials on the warpage were investigated. The warpage behaved complexly depending on the materials for the detach core and carrier. However, glass carrier showed the lower warpage than FR4 carrier regardless of detach core material, and the minimum warpage was observed when the glass was used for the detach core and carrier at the same time.
warpage, FEM, PLP, carrier, detach core.
1Department of Cogno-Mechatronics Engineering, Pusan National University 2Opto-mechatronics Research Institute, Pusan National University 3Department of Opto-Mechatronics Engineering, Pusan National University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 47-52.
본 연구에서는 디스플레이에 적용되는 기능성 고분자 필름의 나노구조에 의한 기계적 물성 저하 문제를 해결하기 위해 열처리 방법과 멀티스케일 계층구조를 통한 PMMA(Poly(methyl-methacrylate)) 필름의 내구성 향상에 대해 연구하였다. PMMA 필름의 기계적 특성을 향상시키기 위한 열처리 공정은 고온/고압의 자유제적 제어공정과 고온 공정 후 급속히 냉각시키는 공정으로 구성되어 있으며, 열 나노임프린트를 이용하여 스크래치로부터 나노구조를 보호하기 위한 멀티스케일 계층구조를 형성하였다. 연필경도 시험에 의해 발생한 미세구조의 손상에 대한 평가를 위해 표면 형상 변화와 기능성 변화를 평가하였으며, 이를 통하여 열처리와 멀티스케일 계층구조가 스크래치에 의한 정접촉각 감소와 투과율 손실 저감에 효과적임을 확인하였다.
In this study, the effects of the heat treatment and multi-scale hierarchical structures on the durability of the nano-patterned functional PMMA(Poly(methyl-methacrylate)) film was evaluated. The heat treatments that consisted of high-pressure/high-temperature flat pressing and rapid cooling process were employed to improve mechanical property of the PMMA films. Multi-scale hierarchical structures were fabricated by thermal nanoimprint to protect nano-scale structures from the scratch. Examination on surface structures and functionalities such as wetting angle and transmittance revealed that the preopposed heat treatment and multi-scale hierarchical structures are effective to minimize surface damages.
Anti-scratch performance, Nano-pattern, Multiscale-pattern, Heat treatments, Residual stresses.
Graduate school of Nano-IT Design Convergence, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 53-58.
집적회로 소자의 축소가 물리적 한계에 도달 한 이후 3D 패키징, 임베디드 패키징 및 팬 아웃 웨이퍼 레벨 패키징(FOWLP, fan-out wafer level packaging)과 같은 혁신적인 패키징 기술들이 활발히 연구되고 있다. 본 연구에서는 FOWLP의 다층 재배선(redistribution layer)에 사용하기 위한 유무기 하이브리드 유전체 소재의 공정을 평가하였다. 폴리이미드(PI) 또는 폴리파라페닐렌벤조비스옥사졸(PBO)과 같은 현 유기 유전체와 비교하여 폴리실세스키옥산(polysilsesquioxane, PSSQ)라고 불리는 유무기 하이브리드 유전체는 기계적, 열적 및 전기적 안정성을 향상시킬 수 있고, UV 노광을 통하여 경화 공정과 패턴 공정을 동시에 할 수 있는 장점이 있다. 폴리실세스키옥산 용액을 6 인치 Si 웨이퍼에 스핀 코팅한 후 pre-baking과 UV 노광 공정을 이용하여 패턴 및 경화를 진행하였다. 10분의 UV 노광 시간으로 경화와 2 μm 라인 패턴 형성이 동시에 진행됨을 확인하였고, 경화된 폴리실세스키옥산 유전체의 유전상수는 2.0에서 2.4 로 측정되었다. 폴리실세스키옥산 소재를 이용하여 고온 경화 공정없이 UV 노광 공정만으로 경화와 패턴을 할 수 있는 공정 가능성을 보였다.
Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multistructured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organicinorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed 2 μm line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.
FOWLP, polysilsesquioxane, Hybrid dielectrics, Redistribution layer, UV curing.
Department of Materials Science and Engineering, Hongik University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 67-74.
두께가 20 μm 이며, 직경이 각기 100 μm, 300 μm, 500 μm인 p형 Sb2Te3와 n형 Bi2Te3 박막레그들을 전기도금하여 열전박막모듈을 형성한 후, 박막레그의 직경에 따른 출력전압과 출력전력을 비교하였다. 100 μm 직경 박막레그들로 구성된 모듈은 ΔT = 36.7K에서 365 mV, 300 μm 직경 박막레그들로 형성한 모듈은 ΔT = 37.5K에서 142 mV, 500 μm 직경 박막레그들로 제작한 모듈은 ΔT = 36.1K에서 53 mV의 open circuit 전압을 나타내었다. 100 μm 직경 박막레그 모듈은 ΔT = 36.7K에서 845 μW, 300 μm 직경 박막레그 모듈은 ΔT = 37.5K에서 631 μW, 500 μm 직경 박막레그 모듈은 ΔT = 36.1K에서 276 μW의 최대출력전력을 나타내었다.
Thermoelectric thin film modules were fabricated by electroplating p-type Sb2Te3 and n-type Bi2Te3 thin film legs with the same thickness of 20 μm and different diameters of 100 μm, 300 μm, and 500 μm, respectively. The output voltage and output power of thin film modules were measured and compared as a function of the leg diameter. The modules processed with thin film legs of 100 μm, 300 μm, and 500 μm-diameter exhibited open circuit voltages of 365 mV at ΔT = 36.7K, 142 mV at ΔT = 37.5K, and 53 mV at ΔT = 36.1K, respectively. Maximum output powers of 845 μW at ΔT = 36.7K, 631 μW at ΔT = 37.5K, and 276 μW at ΔT = 36.1K were obtained for the modules fabricated with the thin film legs of 100 μm, 300 μm, and 500 μm-diameter, respectively.
thermoelectrics, energy harvesting, leg diameter, thin film, electrodeposition.
1Department of Mechanical Engineering, Seoul National University of Science and Technology 2Graduate School of Nano-IT Design Convergence, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 75-81.
Cu-Cu 웨이퍼 본딩 강도를 향상시키기 위한 Cu 박막의 표면처리 기술로 Ar-N2 플라즈마 처리 공정에 대해 연구하였다. Ar-N2 플라즈마 처리가 Cu 표면의 구조적 특성에 미치는 영향을 X선 회절분석법, X선 광전자 분광법, 원자간력현미경을 이용하여 분석하였다. Ar 가스는 플라즈마 점화 및 이온 충격에 의한 Cu 표면의 활성화에 사용되고, N2 가스는 패시베이션(passivation) 층을 형성하여 −O 또는 −OH와 같은 오염으로부터 Cu 표면을 보호하기 위한 목적으로 사용되었다. Ar 분압이 높은 플라즈마로 처리한 시험편은 표면이 활성화되어 공정 이후 더 많은 산화가 진행되었고, N2 분압이 높은 플라즈마 시험편에서는 Cu-N 및 Cu-O-N과 같은 패시베이션 층과 함께 상대적으로 낮은 수치의 산화도가 관찰되었다. 본 연구에서는 Ar-N2 플라즈마 처리가 Cu 표면에서 Cu-O 형성 억제 반응에 기여하는 것을 확인할 수 있었으나 추가 연구를 통하여 질소 패시베이션 층이 Cu 웨이퍼 전면에 형성되기 위한 플라즈마 가스 분압 최적화를 진행하고자 한다.
The effect of Ar-N2 plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of Ar-N2 plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and N2 gas was used to protect the Cu surface from contamination such as −O or −OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high N2 gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the Ar-N2 plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.
Ar-N2 plasma, Nitride passivation, Cu-Cu bonding, Wafer level bonding.
1School of Materials Science and Engineering, Andong National University 2STATS ChipPAC Korea Ltd. 3HANA Micron Inc.
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 83-88.
Cu/Ni/Sn-Ag 미세범프 접합 공정후 Ni/Sn-Ag접합계면에 잔류한 비전도성 필름(non-conductive film, NCF) trap 형성이 전기적 신뢰성에 미치는 영향을 분석하기 위해 온도 150°C, 전류밀도 1.5 × 105 A/cm2 조건에서 electromigration(EM) 신뢰성 실험을 진행하였다. EM 신뢰성 실험 결과, NCF trap이 거의 없는 Cu/Ni/Sn-Ag 미세범프가 NCF trap 이 형성된 미세범프 보다 약 8배 긴 EM 수명을 보여주고 있다. 저항 변화 및 손상계면에 대한 미세구조 분석결과, Ni/Sn-Ag접합계면에 공정 이슈에 의해 형성된 NCF trap이 Ni-Sn 금속간화합물/Sn-Ag솔더계면에 보이드를 유발하여 EM 원자 확산을 방해하기 때문에 빠른 보이드 성장에 의한 전기적 손상이 일찍 발생하는 것으로 판단된다.
The electromigration (EM) tests were performed at 150°C with 1.5 × 105 A/cm2 conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.
non-conductive film, underfill, Cu/Ni/Sn-Ag microbump, intermetallic compound, electromigration.
Electronic Packaging Research Center, Kangnam University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 89-93.
1200V 이상 급의 전기자동차의 파워 모듈에 적용되는 세라믹 기판은 구동 전력으로 고전력이 인가되는 특성상 고열전도도, 고 전기절연성, 저열팽창계수, 급격한 온도 변화에 대한 저항성의 특성이 요구된다. 방열기판에 적용되는 세라믹 중 질화알루미늄과 질화규소는 그 요구를 충족하는 소재로서 고려되고 있다. 이에 따라 본 논문에서는 질화알루미늄과 질화규소의 방열기판 소재로서의 특성을 상용해석프로그램을 통해 비교하였다. 그 결과 질화규소는 질화알루미늄에 대해 각각 동일한 조건의 열을 부여하는 공정을 시물레이션으로 구현했을 때 스트레스와 휨이 덜 발생하여 더 우세한 내충격성, 내stress성을 보였다. 열전도도 측면에서는 질화알루미늄이 방열 소재로서 더 우수한 특성을 지니지만 신뢰성 측면에서는 질화규소가 더 우세함을 시물레이션을 통해 관찰하였다.
Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.
Silicon Nitride, Aluminum Nitride, SiC Semiconductor.
Nano Materials and Convergence Center, Korea Institute of Ceramic Engineering and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 95-99.
최근 고집적 고출력 전자 패키지의 효율적인 열전달을 위한 기판 및 방열소재로서 절연성 고열전도 필름의 수요가 커지고 있어, 알루미나, 질화알루미늄, 질화보론, 탄소나노튜브 및 그래핀 등의 고열전도 필러소재를 사용한 고방열 복합소재에 대한 많은 연구가 이루어지고 있다. 그 중에서도 육방정 질화보론(h-BN) 나노시트가 절연성 고열전도 필러 소재로서 유력한 후보 물질로 선택되고 있다. 본 연구는 이 h-BN 나노시트와 PVA로 된 세라믹/폴리머 복합체 필름의 방열특성 향상에 관한 것이다. h-BN 나노시트는 h-BN 플레이크 원료 분말을 유기용매를 사용한 볼밀링과 초음파 처리에 의한 물리적 박리공정으로 만들었으며, 이를 사용한 h-BN/PVA 복합 필름을 제조한 결과 성형된 복합필름의 면방향과 두께방향 열전도도는 50 vol%의 필러함량에서 각각 2.8 W/m·K 및 10 W/m·K 의 높은 열전도도가 나타났다. 이 복합필름을 PVA의 유리전이온도 이상에서 일축 가압하여 h-BN 판상분말의 얼라인먼트를 향상시킴으로써 면방향 열전도도를 최대 13.5 W/m·K까지 증가시킬 수 있었다.
High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over 2.8 W/m·K for transverse and 10 W/m·K for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to 13.5 W/m·K at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.
Boron nitride, nano-sheets, polyvinyl alcohol, composites, packaging substrate.
Department of Materials Science and Engineering, Hongik University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 101-104.
An electric field was applied to a Mo conductive layer in the sandwiched structure of glass/SiO2/Mo/SiO2/a-Si to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the 2nd generation glass substrate.
Crystallization, Thin Film Transistor, Poly-Si, Joule-heating, AMOLED.
1Department of Advanced Chemicals & Engineering, Chonnam National University 2Optoelectronics Convergence Research Center, Chonnam National University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 105-109.
본 연구는 구리의 이산화탄소 환원 촉매 특성을 향상시키기 위해 전극 촉매 물질인 다공성 구리에 그래핀을 적용하였다. Thermal Chemical Vapor Deposition(TCVD)법을 이용하여 직접적으로 그래핀이 혼합된 다공성 구리를 제조하였다. 0.1 M KHCO3 전해액을 사용하여, −1.0 V ~ −1.4 V의 인가전위로 전기화학 실험을 수행한 결과, 그래핀이 혼합된 다공성 구리 전극의 전류 밀도는 다공성 구리에 비해 1.8 배 이상 증가하였다. 생성물을 평가한 결과, 다공성 구리 전극에서 CO와 H2만 생성된 반면 그래핀이 포함된 다공성 구리의 생성물은 CO 뿐만이 아닌 CH4와 C2H4가 생성되었다. 이는 그래핀으로 인해 이산화탄소 흡착 시간이 길어짐으로써 반응 중 생성된 중간체들이 전극 표면에 머무르는 시간이 길어졌으며, 결과적으로 C2 화합물 생성 반응까지 연속적으로 진행될 수 있었다고 판단된다.
We studied graphene synthesis to porous Cu to improve the characteristics of carbon dioxide reduction of cu. Cu powders were formed through Thermal Chemical Vapor Deposition(TCVD) to Porous Cu/Graphene structures synthesized with graphene. As a result of electrochemical experiments using a 0.1 M KHCO3 electrolyte at an applied potential of −1.0 V to −1.4 V, the current density of Porous Cu/Graphene was 1.8 times higher than that of Porous Cu. As a result of evaluating the product, CO and H2 were generated to Porous Cu electrode. On the other hand, the product of porous Cu/Graphene produced CO, CH4 and C2H4. It is considered that the graphene causes longer carbon dioxide adsorption time, which means that the intermediates formed during the reaction remain on the electrode surface for a longer time. As a result, it can be concluded that the production reaction of the C2 compound could be continuously performed.
Copper, Porous, Electrochemical, Carbon dioxide, Graphene.
Department of Materials Science and Engineering, Hongik University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 111-118.
강성도가 서로 다른 두 polydimethylsiloxane (PDMS) 탄성고분자와 flexible printed circuit board (FPCB)로 이루어진 soft PDMS/hard PDMS/FPCB 구조의 강성도 국부변환 신축기판을 개발하기 위해 PDMS와 FPCB를 acrylic-silicone 양면테이프를 사용하여 접합한 후 접합공정에 따른 PDMS/FPCB 계면접착력을 분석하였다. 완전 경화된 PDMS에 acrylic-silicone 양면테이프의 silicone 접착제로 접착한 FPCB의 pull 강도는 259 kPa이었으며, pull 시험시 PDMS와 silicone 접착제 사이에서 박리가 발생하였다. 반면에 60°C에서 15~20분 유지하여 반경화시킨 PDMS에 acrylic-silicone 양면테이프의 silicone 접착제로 FPCB를 접착 후 60°C에서 12시간 유지하여 PDMS를 완전 경화시키면 pull 강도가 1,007~1,094 kPa로 크게 향상되었으며, pull 시험시 계면 박리가 acrylic-silicone 양면테이프의 acrylic 접착제와 FPCB 사이에서 발생하였다.
In order to develop a local stiffness-variant stretchable substrate with the soft PDMS/hard PDMS/FPCB configuration consisting of two stiffness-different polydimethylsiloxane (PDMS) parts and flexible printed circuit board, a FPCB was bonded to PDMS using the acrylic-silicone double-sided tape and the interfacial adhesion of the PDMS/FPCB was evaluated. The pull strength of the FPCB, which was bonded to the fully cured PDMS using the silicone adhesive of the double-sided tape, was 259 kPa and the delamination during the pull test occurred at the interface between the PDMS and the silicone adhesive. On the contrary, the bonding process, for which the FPCB was bonded using the silicone adhesive to the PDMS partially cured for 15~20 minutes at 60°C and then the PDMS was fully cured for 12 hours at 60°C, exhibited the remarkably enhanced pull strength of 1,007~1,094 kPa. With the above mentioned bonding process, the delamination during the pull test was observed at the interface between the FPCB and the acrylic adhesive of the acrylic-silicone double sided tape.
stretchable packaging, stretchable substrate, PDMS, FPCB, adhesion silicone adhesive.
Department of Advanced Materials Engineering, Kyonggi University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 119-122.
본 논문은 용액공정으로 제작한 ZnO/Ag/ZnO 다층구조의 투과도에 대해 연구하였다. 다양한 두께의 ZnO/Ag/ZnO 다층구조를 스핀코팅을 이용해 제작하였고 광학적 특성을 측정하였다. ZnO는 졸겔법으로 제작하였고 Ag는 Ag 용액을 이용해 스핀코팅으로 증착하였다. 최적화된 Ag 두께를 찾기 위해 Ag 용액의 농도, 스핀코팅의 회전속도를 조절하고 두께와 면저항을 측정하였다. ZnO/Ag/ZnO 다층구조의 투과도는 가시광 영역에서 최대 63%까지 증가하였다. 적외선 영역에서 ZnO/Ag/ZnO 다층구조의 투과도는 Ag 용액의 농도가 2.5wt%일 때 투과도가 35%까지 감소하였다.
Various ZnO/Ag/ZnO multilayers were fabricated and their optical properties were investigated. Top and bottom ZnO layers were formed by sol-gel method and mid-metal layers were deposited by spin coating. To find suitable deposition condition of Ag, we measure thickness and sheet resistance of Ag monolayer. After the optimization of Ag monolayer, we fabricate ZnO/Ag/ZnO multilayers. Transmittance of ZnO/Ag/ZnO multilayers increased to 63%. In near IR region, transmittance of ZnO/Ag/ZnO multilayers decreased to 35% when the concentration of Ag solution was 2.5wt%.
ZnO, OMO multilayers, All solution process.
1Joining R&D Group, Korea Institute of Industrial Technology 2School of Advanced Material Science and Engineering, Sungkyunkwan University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 123-128.
플럭스의 활성제 종류에 따른 솔더페이스트의 인쇄성 및 젖음성을 평가하였다. 활성제는 디카르복실산 계열로 탄소기의 개수가 0인 옥살산, 1인 말론산, 2인 숙신산, 3인 글루타르산, 4인 아디프산, 5인 피메릭산이 사용되었다. SMT scope로 250°C에서 용융솔더를 실시간 관찰했을 때, 글루타르산을 사용한 솔더가 가장 매끈한 표면을 갖고, 젖음성도 우수함을 알 수 있었다. 슬럼프율은 탄소기 개수가 1, 2, 3인 말론산, 숙신산, 글루타르산을 활성제로 사용했을 때 작았고, 퍼짐성은 활성제의 탄소기 개수가 2 이상인 숙신산, 글루타르산, 아디프산, 피메릭산을 사용했을 때 우수하였다. 웨팅밸런스로 젖음성을 분석한 결과 탄소기 개수가 3이상일 때, 제로크로스타임이 1초 이하로 우수함을 알 수 있었다. 탄소기 개수가 0, 1인 옥살산, 말론산을 플럭스 활성제로 사용하였을 때, 제로크로스 타임이 길고 최대 젖음력이 낮았다. DSC와 TGA를 통해 옥살산과 말론산을 활성제로 사용한 플럭스는 솔더링 시 분해가 발생되고, 이로 인해 활성도가 떨어져서 디웨팅 등이 발생하였다. 글루타르산은 재산화가 적고, 높은 젖음성과 낮은 슬럼프 특성을 보여 주었다.
Effect of activators in flux on the printability and wettability of a solder paste was evaluated in this study. The activators in this study were dicarboxylic acids, which were oxalic acid (n = 0), malonic acid (n = 1), succinic acid (n = 2), glutaric acid (n = 3), adipic acid (n = 4), and pimelic acid (n = 5). When the solder pastes were observed with a SMT scope, solder with glutaric acid showed clean and shiny surface when it was melted. Slump ratio of the solder pastes was low when the carbon numbers of the dicarboxylic acid were 1-3. Spreadability was high when the carbon number was over 2. Zero cross time of wetting balance test was under 1 sec when the carbon number was over 3. When activator was oxalic acid or malonic acid, zero cross time was over 1 sec and maximum wetting force was low. Fluxes with the oxalic acid and malonic acid showed decomposition at the temperature close to melting point. Among the dicarboxylic acids, glutaric acid provided excellent slump, spreadability, and wettability.
flux, solder paste, dicarboxylic acid, wettability, printability, Sn-Ag-Cu.
1Graduate School of Nano IT Design Fusion, Seoul National University of Science and Technology 2Department of Materials Science and Engineering, Seoul National University of Science and Technology 3Dept. Of Manufacturing System and Design Engineering, Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 129-135.
신축성 기판은 신축성 전자소자의 신축성, 공정성, 내구성을 결정하는 매우 중요한 소재로서 신축성 전자소자를 개발함에 있어서 우선적으로 고려해야 된다. 특히 현재 사용되는 신축성 기판은 히스테리시스가 존재하여 센서 및 기타 응용에 많은 어려움이 있다. 본 연구에서는 신축성 소재 기판으로 사용되는 PDMS와 Ecoflex를 혼합한 PDMS-Ecoflex 하이브리드 신축성 기판을 제작하여 신축성과 히스테리시스 특성을 향상하고자 하였다. 인장 시험을 통하여 신축성 하이브리드 기판의 기계적 거동을 관찰하였으며, 투과도 측정을 통하여 투과도를 평가하였다. Ecoflex의 함량이 증가할수록 하이브리드 신축성 기판은 더 유연해지며, 탄성계수는 감소한다. 또한 PDMS 기판은 270% 변형률에서 파단이 발생한 반면, PDMS-Ecoflex 하이브리드 기판은 500%의 변형률까지 파단되지 않으며 우수한 신축성을 갖는 것을 알 수 있었다. 반복 인장시험에서 PDMS와 Ecoflex의 혼합비를 2:1로 제작된 기판은 히스테리시스가 발생하였다. 반면 1:1의 혼합비로 제작된 기판의 경우 50%, 100%의 변형률에서는 히스테리시스가 발생하지 않았다. 결론적으로 500% 이상의 신축성을 갖으면서 히스테리시스가 없은 기판을 제작하였다. 기판의 혼합비에 따른 광투과도 측정 결과, Ecoflex 기판의 투과도는 68.6% 이였으나, PDMS-Ecoflex 함량이 2:1, 1:1인 하이브리드 기판의 경우, 각각 78.6%, 75.4%의 투과율을 보이며, 향후 투명 신축성 기판으로서 개발 가능성을 보여주었다.
In the stretchable electronic devices, the stretchable substrate is a very essential material which determines the stretchability, performances and durability of the stretchable electronic devices. In particular, the current stretchable materials have hysteresis making difficult to used as sensors and other electronic devices. In this study, we developed a PDMS-Ecoflex hybrid stretchable substrate mixed with PDMS and Ecoflex material in order to increase stretchability and improve hysteresis characteristics. Mechanical behavior of the hybrid substrate was evaluated using a tensile test, and optical transmittance of the hybrid substrate was also measured. As the content of Ecoflex increases, the PDMS-Ecoflex hybrid substrate becomes more flexible, and the elastic modulus decreases. In addition, the PDMS substrate failed a tensile strain of 270%, while the PDMS-Ecoflex hybrid substrate did not fail even at 500% strain indicating excellent stretchability. In the repeated tensile test, the hybrid substrate with 2:1 mixing ratio of PDMS and Ecoflex showed hysteresis. On the other hand, in the case of the hybrid substrate with the mixing ratio of 1:1, hysteresis did not occur at a strain of 50% and 100%. Hence, we developed a stretchable substrate with over 150% stretchability and no hysteresis characteristics. The optical transmittance of the Ecoflex substrate was 68.6%, whereas the transmittances of the hybrid substrate with mixing ratio of 2:1 and 1:1 were 78.6% and 75.4%, respectively. These results indicate that the PDMS-Ecoflex hybrid substrate is a potential candidate for a transparent stretchable substrate.
Stretchable Substrate, PDMS, Ecoflex, Mechanical Properties.
1Amkor Technology Korea 2Dept. of Mechanical System Eng. Seoul National University of Science and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 137-142.
(ZnO/Co) 다층박막 구조를 이용하여 Co 도핑한 ZnO의 상온강자성 특성을 조사하였으며, 특히 ZnO 박막층의 두께가 (ZnO/Co) 다층박막의 상온강자성 특성에 미치는 영향을 조사하였다. ZnO 박막층의 두께가 20Å, 40Å일 때 증착상태에서는 각각 반자성과 강자성 특성을 나타내었으며 진공열처리 후에는 모두 강자성 특성을 나타내었다. 특히 (ZnO 40Å/Co xÅ)는 열처리 후에 음의 잔류자화 거동을 나타내었다. UV-Vis 분석을 통해서 Co 일부가 Zn와 치환되어 위치하고 있음을 확인할 수 있었으며, 열처리 전후에 대한 XPS 및 HRTEM EDS 분석에서 Co 클러스터의 형성은 관찰되지 않았다.
Room temperature ferromagnetism of Co doped ZnO was studied using (ZnO/Co) multilayer structure, and the effects of ZnO sub-layer thickness on the RT ferromagnetism was investigated. As for the as-deposited state, the diamagnetism was observed for (ZnO 20Å/Co xÅ) while the ferromagnetism was observed for (ZnO 40Å/Co xÅ). After vacuum-annealed, both showed the RT ferromagnetism and (ZnO 40Å/Co xÅ) structure interestingly showed negative remanence magnetization behavior. UV-Vis spectrometer revealed that Co atoms were substituted with Zn in ZnO and Co cluster was not found in XPS and HRTEM EDS analysis.
ferromagnetism, DMS, ZnO, Co, multilayer.
1Department of Materials Science and Engineering, Yonsei University 2GLChem Co., ltd.
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 143-148.
물유리 기반 실리카 에어로겔은 실리카 알콕사이드 기반 실리카 에어로겔에 비해 단가가 싸지만 기공률 및 비표면적과 같은 기공 특성이 상대적으로 열악하여 수요가 감소되고 있다. 이를 해결하기 위해 본 연구에서는 졸 상태에서 건조 제어 화학 첨가제(drying control chemical additive)인 아세토니트릴(acetonitrile)을 첨가하여 물성을 향상시키고자 하였다. 상압 건조 물유리 기반 실리카 에어로겔은 졸-겔 공정을 통해 제조되었으며, 졸 상태에서 물유리와 0, 0.05, 0.1, 0.15, 0.2의 몰 비율로 아세토니트릴을 첨가하여 실험을 수행하였다. 최종 생성물의 물성은 퓨리에 분광기(Fourier transform infrared), 접촉각측정기(contact angle measurement), Brunauer-Emmett-Teller 및 Barrett-Joyner-Halenda 분석기와 전계방사형 주사전자현미경(field emission scanning electron microscopy)를 이용하여 분석하였다. 졸 상태에서 물유리와의 몰 비율이 0.15인 아세토니트릴을 첨가한 샘플의 경우, 높은 비표면적 (577 m2/g), 높은 기공 부피 (3.29 cc/g), 높은 기공률 (93%)을 보유하여 실리카 알콕사이드 기반 실리카 에어로겔과 유사한 기공구조를 나타낼 수 있음을 확인하였다.
Sodium silicate based silica aerogels are lower in cost than silica alkoxide based silica aerogels, but the demand is decreasing as their physical properties are lowered. In this research, acetonitrile as a drying control chemical additive (DCCA) is added in the sol state to improve the pore-structural properties of sodium silicate based silica aerogel by preventing the agglomeration of particles and cross-linked bond. The sodium silicate based silica aerogel by ambient pressure drying were prepared by sol-gel process. Acetonitrile/Na2SiO3 molar ratio of 0, 0.05, 0.1, 0.15, and 0.2 was added to the sol state. The physical properties of the final product were analyzed using Fourier transform infrared, contact angle measurement, Brunauer-Emmett-Teller and Barrett-Joyner-Halenda measurements and field emission scanning electron microscopy. It was confirmed that the sample with adding 0.15 molar ratio of acetonitrile and sodium silicate showed a high specific surface area (577 m2/g), a high pore volume (3.29 cc/g), and a high porosity (93%) comparable to the porestructural properties of silica alkoxide based silica aerogels.
acetonitrile, drying control chemical additive, sodium silicate, silica aerogel, ambient pressure drying.
Nano Materials and Convergence Center, Korea Institute of Ceramic Engineering and Technology
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 149-154.
가로등 및 방폭등용 고출력 LED 조명 시스템의 광원으로서, 다수의 LED 칩이 실장된 50와트급 LED 어레이 모듈을 chip-on-board형 고방열 세라믹-메탈 하이브리드 기판을 사용하여 제작하였다. 고방열 세라믹-메탈 하이브리드 기판은 고열전도 알루미늄 금속 열확산 기판에 저온소결용 글라스-세라믹 절연 페이스트와 은 전극 페이스트를 후막 스크린 공정에 의해 도포한 다음, 건조 후 515°C 에서 동시소성하여 LED 칩을 실장할 세라믹 절연층과 은전극 회로층을 형성하여 제조하였다. 이 하이브리드 기판의 방열특성 평가를 위한 비교 샘플로서 기존의 에폭시 기반 FR-4 복합수지로 만든 써멀비아형 PCB 기판에도 동일한 디자인의 LED 어레이 모듈을 제작한 다음, 다중채널 온도측정장치와 열저항 측정기로 방열특성을 비교 분석하였다. 그 결과, 4 × 9 type LED 어레이 모듈에서 세라믹-메탈 하이브리드 기판의 열저항은 써멀비아형 FR-4 기판에 비하여 약 1/3로 나타났으며, 이것은 곧 방열성능이 적어도 3배 이상 높은 것으로 볼 수 있다.
This paper describes the fabrication and heat transfer property of 50 watts rated LED array module where multiple chips are mounted on chip-on-board type ceramic-metal hybrid substrate with high heat dissipation property for high power street and anti-explosive lighting system. The high heat transfer ceramic-metal hybrid substrate was fabricated by conformal coating of thick film glass-ceramic and silver pastes to form insulation and conductor layers, using thick film screen printing method on top of the high thermal conductivity aluminum alloy heat-spreading panel, then co-fired at 515°C. A comparative LED array module with the same configuration using epoxy resin based FR-4 PCB with thermalvia type was also fabricated, then the thermal properties were measured with multichannel temperature sensors and thermal resistance measuring system. As a result, the thermal resistance of the ceramic-metal hybrid substrate in the 4 × 9 type LEDs array module exhibited about one third to the value as that of FR-4 substrate, implying that at least triple performance of heat transfer property as that of FR-4 substrate was realized.
Heat transfer, LED module, ceramic-metal, hybrid substrate, thermal resistance.
Department of Materials Science and Engineering, Hongik University
Journal of the Microelectronics and Packaging Society, Vol. 25, No. , pp. 155-161.
강성도가 서로 다른 polydimethylsiloxane (PDMS) 탄성고분자와 flexible printed circuit board (FPCB)로 이루어진 PDMS/FPCB 구조의 강성도 국부변환 신축기판에 100 μm 직경의 Cu/Au 범프를 갖는 Si 칩을 anisotropic conductive adhesive (ACA)를 사용하여 플립칩 본딩 후, ACA내 전도성 입자에 따른 플립칩 접속저항을 비교하였다. Au 코팅된 폴리머 볼을 함유한 ACA를 사용하여 플립칩 본딩한 시편은 43.2 mΩ의 접속저항을 나타내었으며, SnBi 솔더입자를 함유한 ACA로 플립칩 본딩한 시편은 36.2 mΩ의 접속저항을 나타내었다. 반면에 Ni 입자를 함유한 ACA를 사용하여 플립칩 본딩한 시편에서는 전기적 open이 발생하였는데, 이는 ACA내 Ni 입자의 함유량이 부족하여 entrap된 Ni 입자가 하나도 없는 플립칩 접속부가 발생하였기 때문이다.
A Si chip with the Cu/Au bumps of 100-μm diameter was flip-chip bonded using different anisotropic conductive adhesives (ACAs) onto the local stiffness-variant stretchable substrate consisting of polydimethylsiloxane (PDMS) and flexible printed circuit board (FPCB). The average contact resistances of the flip-chip joints processed with ACAs containing different conductive particles were evaluated and compared. The specimen, which was flip-chip bonded using the ACA with Au-coated polymer balls as conductive particles, exhibited a contact resistance of 43.2 mΩ. The contact resistance of the Si chip, which was flip-chip processed with the ACA containing SnBi solder particles, was measured as 36.2 mΩ, On the contrary, an electric open occurred for the sample bonded using the ACA with Ni particles, which was attributed to the formation of flip-chip joints without any entrapped Ni particles because of the least amount of Ni particles in the ACA.
stretchable packaging, stretchable substrate, PDMS, FPCB, flip chip, contact resistance.